2012. 4. 2 1/2 semiconductor technical data KTC2030D epitaxial planar npn transistor revision no : 0 dpak dim millimeters a b c d d b e f g h h j j k l 1.0 max 2.3 0.2 0.5 0.1 0.5 0.1 e 0.9 0.1 m n m g a c f f 123 0.95 max 6.6 0.2 + _ 6.1 0.2 + _ 5.0 0.2 + _ 1.1 0.2 + _ 2.7 0.2 + _ + _ + _ + _ + _ 2.3 0.1 + _ 1.0 0.1 + _ n k l 1. base 2. collector 3. emitter characteristic symbol rating unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 60 v v cer 100 emitter-base voltage v ebo 10 v collector current i c 3 a base current i b 0.5 a collector power dissipation ta=25 ? p c 1 w tc=25 ? 20 junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =80v, i e =0 - - 1 a i cer v ce =100v, r be =10 ? - - 1 a emitter cut-off current i ebo v eb =10v, i c =0 - - 1 a collector-emitter breakdown voltage v (br)ceo i c =50ma, i b =0 60 - - v dc current gain h fe (1) v ce =5v, i c =1ma 100 - - h fe (2) v ce =5v, i c =0.5a 150 - 250 collector emitter saturation voltage v ce(sat) i c =2a, i b =0.2a - 0.25 1.0 v base-emitter voltage v be v ce =5v, i c =0.5a - 0.7 1.0 v transition frequency f t v ce =5v, i c =0.5a - 30 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 35 - pf switching time turn-on time t on b= =x ? b1 i cc v =30v i b2 i b2 20 sec i =-i =0.2a 1% b1 b2 output duty cycle input < = - 0.085 - s storage time t stg - 1.02 - fall time t f - 0.041 - electrical chara cteristics (ta=25 ? ) general purpose application. features h low collector saturation voltage : v ce(sat) =1.0v(max) at i c =2a, i b =0.2a maximum rating (ta=25 ? )
2012. 4. 2 2/2 KTC2030D revision no : 0 0 0 collector-emitter voltage v (v) ce ce c i - v h - i c collector current i (a) 0.02 0.05 0.1 0.3 10 10 3 0.05 0.02 collector current i (a) c v - i 12345678 0.5 1.0 1.5 2.0 2.5 3.0 common emitter tc=25 c 60 50 40 30 20 90 80 70 0 i =10ma b fe c 1310 30 50 100 300 common emitter v =5v ce tc=100 c tc= 25 c tc=-25 c ce(sat) c 1 0.3 0.1 5 0.03 0.05 0.1 0.3 0.5 1 common emitter i /i =10 c b t c= 100 c tc=25 c tc=-25 c ta=25 c tc=25 c tc= 25 c collector power dissipation 0 c 0 ambient temperature ta ( c) pc - ta collector current i (a) c 0.1 100 30 3 1 collector-emitter voltage v (v) ce safe operating area 25 50 75 100 125 150 175 200 4 8 12 16 20 24 28 32 10 550 0.3 0.5 1 3 5 10 single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature * i max(pulsed)* c c i max 1ms* 10ms* 100ms* dc o peration v max. ceo p (w) (continuous)
|
